SI4376DY-T1 datasheet(3/10 Pages) VISHAY

Part #	SI4376DY-T1

Description	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4376DY

Vishay Siliconix

Document Number: 71934

S-31726—Rev. C, 18-Aug-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

MOSFET CHANNEL−1

0

300

600

900

1200

1500

0

5

10

15

20

25

30

0

5

10

15

20

25

30

0

1234

5

0

5

10

15

20

25

30

0

2468

10

VGS = 10 thru 5 V

TC = 125_C

-55_C

25_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

3 V

0.6

0.8

1.0

1.2

1.4

1.6

-50

-25

0

25

50

75

100

125

150

0

2

4

6

8

10

04

8

12

16

20

0.000

0.010

0.020

0.030

0.040

0

5

10

15

20

25

30

VDS - Drain-to-Source Voltage (V)

Crss

VDS = 15 V

ID = 7.5 A

ID - Drain Current (A)

VGS = 10 V

ID = 7.5 A

VGS = 10 V

VGS = 4.5 V

Gate Charge

Qg - Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

Coss

Ciss

4 V

On-Resistance vs. Drain Current

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