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SI4376DY-T1 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4376DY-T1 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Si4376DY Vishay Siliconix Document Number: 71934 S-31726—Rev. C, 18-Aug-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET CHANNEL−1 0 300 600 900 1200 1500 0 5 10 15 20 25 30 0 5 10 15 20 25 30 0 1234 5 0 5 10 15 20 25 30 0 2468 10 VGS = 10 thru 5 V TC = 125_C -55_C 25_C Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 3 V 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 04 8 12 16 20 0.000 0.010 0.020 0.030 0.040 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Crss VDS = 15 V ID = 7.5 A ID - Drain Current (A) VGS = 10 V ID = 7.5 A VGS = 10 V VGS = 4.5 V Gate Charge Qg - Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) Coss Ciss 4 V On-Resistance vs. Drain Current |
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