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K7N163601-FC20 Datasheet(PDF) 10 Page - Samsung semiconductor

Part # K7N163601-FC20
Description  512Kx36 & 1Mx18-Bit Flow Through NtRAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K7N163601-FC20 Datasheet(HTML) 10 Page - Samsung semiconductor

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512Kx36 & 1Mx18 Flow-Through NtRAMTM
- 10 -
Rev 3.0
Nov. 2003
K7M161825A
K7M163625A
VSS
VIH
VSS-1.0V
20% tCYC (MIN)
(VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70
°C)
TEST CONDITIONS
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
VALUE
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
VDDQ/2
Output Load
See Fig. 1
DC ELECTRICAL CHARACTERISTICS (VDD=3.3V+0.165V/-0.165V, TA=0
°C to +70°C)
Notes : 1. The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. VIH=V DDQ +0.3V.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT NOTES
Input Leakage Current(except ZZ)
IIL
VDD=Max ; V IN=VSS to V DD
-2
+2
µA
Output Leakage Current
IOL
Output Disabled,
-2
+2
µA
Operating Current
ICC
Device Selected, I OUT=0mA,
ZZ
VIL , Cycle Time ≥ tCYC Min
-65
-
270
mA
1,2
-75
-
250
Standby Current
ISB
Device deselected, IOUT=0mA,
ZZ
VIL, f=Max,
-65
-
100
mA
-75
-
90
ISB1
Device deselected, IOUT=0mA,
ZZ
0.2V, f=0,
All Inputs=fixed (VDD -0.2V or
-
70
mA
ISB2
Device deselected, IOUT=0mA,
ZZ
≥VDD-0.2V, f=Max, All
Inputs
VIL or ≥VIH
-
60
mA
Output Low Voltage(3.3V I/O)
VOL
IOL=8.0mA
-
0.4
V
Output High Voltage(3.3V I/O)
VOH
IOH=-4.0mA
2.4
-
V
Output Low Voltage(2.5V I/O)
VOL
IOL=1.0mA
-
0.4
V
Output High Voltage(2.5V I/O)
VOH
IOH=-1.0mA
2.0
-
V
Input Low Voltage(3.3V I/O)
VIL
-0.3*
0.8
V
Input High Voltage(3.3V I/O)
VIH
2.0
VDD+0.3**
V
3
Input Low Voltage(2.5V I/O)
VIL
-0.3*
0.7
V
Input High Voltage(2.5V I/O)
VIH
1.7
VDD+0.3**
V
3


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