NX8560SJ330-CC datasheet(1/5 Pages) CEL

Part #	NX8560SJ330-CC

Description	NECs EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS

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Manufacturer	CEL [California Eastern Labs]

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NEC's EA MODULATOR

AND WAVELENGTH MONITOR

INTEGRATED 1550 nm

MQW-DFB LASER DIODE MODULE

FOR 10 Gb/s APPLICATIONS

NX8560SJ

Series

FEATURES

• INTEGRATED ELECTRO-ABSORPTION MODULATOR

• WAVELENGTH MONITOR FUNCTION

• 10 Gb/s TRANSMISSION UP TO 40 KM SSMF

• 7-PIN BUTTERFLY PACKAGE WITH GPO CONNECTOR

• AVAILABLE FOR DWDM WAVELENGTH

BASED ON ITU-T RECOMMENDATION

NEC's NX8560SJ Series is an Electro-Absorption (EA) Modu-

lator and wavelength monitor intergraded, 1550 nm Multiple

Quantum Well (MQW) structured Distributed Feed-Back (DFB)

laser diode module. It is capable of transmitting up to 40 km

standard single mode Þber (dispersion: 800 ps/nm) for 10 Gb/s

applications with built in wavelength monitor.

DESCRIPTION

Note:

1. TSET is a certain point between 20°C and 35°C for ITU-T grid wavelength.

2. 40 km SMF under modulation, 9.95328 GB/S, PRBS 223_1, VEA = VCENTER ± 1/2VMOD, IFLD = Iop, NEC Test System

Vcenter: a certain point between -2.0 V and -0.5 V.

Vmod: a certain point 3 V or below.

Iop: a certain point between 50 mA and 80 mA.

3. Available for DWDM wavelength based on ITU-T recommendations (50 GHz grid). Please refer to ordering information.

4. BER = 10-10.

PART NUMBER

NX8560SJ Series

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

TSET

Laser Set Temperature 1

°C

20

35

Iop

Operating Current

mA

50

60

80

VCENTER

Modulation Center Voltage

V

-2.0

-0.5

VMOD

Modulation Voltage

V

2

3

VFLD

Forward Voltage of LD, IFLD = Iop

V

2.0

ITH

Threshold Current

mA

7

20

Pf

Optical Output from Fiber, Under modulation2

dBm

-3

-2

λp

Peak Emission Wavelength, IFLD = Iop, VEA = 0 V, TLD = TSET

nm

1528

ITU-T3

1564

SMSR

Side Mode Suppression Ratio, IFLD = Iop, VEA = 0 V

dB

30

> 37

ER

Extinction Ratio, Under modulation2

dB

10

11

tr

Rise Time, 20-80%, Under modulation2

ps

40

tf

Fall Time, 80-20%, Under modulation2

ps

40

DP

Dispersion Penalty, 800 ps/nm under modulation2, 4

dB

2.0

IS

Optical Isolation

dB

23

S11

RF Return Loss,

IFLD = IOP, VEA = 1 V, 50 Ω, f = 130 MHz to 5 GHz

dB

-10

-8

IFLD = IOP, VEA = 1 V, 50 Ω, f = 5 GHz to 10 GHz

dB

-8

-5

ELECTRO-OPTICAL CHARACTERISTICS (TLD = TSET, TC = -5 + 70°C, BOL unless otherwise speciÞed)

California Eastern Laboratories

PRELIMINARY DATA SHEET

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