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M57161L-01 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part # M57161L-01
Description  HYBRID IC FOR DRIVING TRENCH-GATE IGBT
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M57161L-01 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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Mar. 2002
OUTLINE DRAWING
MITSUBISHI HYBRID IC
M57161L-01
FOR DRIVING TRENCH-GATE IGBT
BLOCK DIAGRAM
DESCRIPTION
M57161L-01 is a hybrid IC designed to drive trench-
gate IGBT module with built in RTC.
This device can operate by an input of +15V because of
electrical isolation between the input and output by an
opto coupler,and the built in DC-DC converter isolated
between a pair of positive/negative outputs for gate
driving.
With built in protection circuits,this devices can maintain
a reverse bias for a predetermined time after the detec-
tion of an over current(short circuit). Therefore,the pro-
tective system operates with a margin of time.
The over current(short circuit) detector functions with
RTC circuit built in IGBT module to detect a drop of gate
voltage.
Recommend module ; IGBT module (F)series
FEATURES
q Built in insulated DC-DC converter for IGBT drive
q Built in short circuit protection circuit
q Electrical isolation between input and output with opto-coupler (Vios=2500Vrms for 1minute)
APPLICATION
To drive IGBT module for inverter or AC servo systems application
Dimentions : mm
83.0max
4.5max
11.0max
15.0max
5.5max
6.0max
2.54
×28=71.12
17
19
Error out
VEE
27
Error
out
28
29
SC detect
Gate
detect
23 Vo
22
24
Timer
VGE error
detect
VCC
detect
VCC
18 GND
Constant
voltage
circuit
DC–AC
Interface
converter
Opto-coupler
6
5
3
1
4
2
390
VD
VIN


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