Part Name
         Description
2SB819

 Silicon PNP epitaxial planer type(For low-frequency output amplification) ( 3 Page)


PANASONIC
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2
Transistor
2SB819
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (˚C)
0
–10
–8
–2
–6
–4
0
–4.0
–3.0
–1.0
–2.5
–3.5
–2.0
– 0.5
–1.5
Ta=25˚C
I
B=–40mA
–30mA
–25mA
–20mA
–15mA
–10mA
–35mA
–5mA
Collector to emitter voltage V
CE
(V)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C/IB=10
Ta=75˚C
25˚C
–25˚C
Collector current I
C
(A)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C/IB=10
Ta=–25˚C
75˚C
25˚C
Collector current I
C
(A)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
0
600
500
400
300
200
100
V
CE=–5V
Ta=75˚C
25˚C
–25˚C
Collector current I
C
(A)
10
100
1000
10000
30
300
3000
0
240
200
160
120
80
40
V
CB=–5V
Ta=25˚C
Emitter current I
E
(mA)
–1
–3
–10
–30
–100
0
150
120
60
90
30
I
E=0
f=1MHz
Ta=25˚C
Collector to base voltage V
CB
(V)
0.001
0.01
0.1
1
10
0
–60
–50
–40
–30
–20
–10
Ta=25˚C
Base to emitter resistance R
BE
(k
Ω)
0
120
100
80
20
60
40
1
1000
100
10
3
30
300
V
CE=–12V
Ambient temperature Ta (˚C)
PC — Ta
IC — VCE
VCE(sat) — IC
VBE(sat) — IC
hFE — IC
fT — IE
Cob — VCB
VCER — RBE
ICEO — Ta
1  2  3 



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