1

Power Transistors

2SB928, 2SB928A

Silicon PNP epitaxial planar type

For power amplification

For TV vartical deflection output

Complementary to 2SD1250 and 2SD1250A

q

q

q

N type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

Parameter

Collector to base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

–200

–150

–180

–6

–3

–2

30

1.3

150

–55 to +150

Unit

V

V

V

A

A

W

˚C

˚C

2SB928

2SB928A

Ta=25

°C

Parameter

Collector cutoff current

Emitter cutoff current

Collector to base voltage

Collector to emitter

voltage

Emitter to base voltage

Forward current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Symbol

*

Conditions

min

–200

–150

–180

–6

60

50

typ

30

max

–50

–50

240

–1

–1

Unit

µA

µA

V

V

V

V

V

MHz

2SB928

2SB928A

Rank

Q

P

60 to 140

100 to 240

Unit: mm

1:Base

2:Collector

3:Emitter

N Type Package

8.5

±0.2

6.0

±0.5

1.5max.

0.8

±0.1

5.08

±0.5

2.54

±0.3

1.1max.

0.5max.

1.0

±0.1

3.4

±0.3

2

13

Unit: mm

8.5

±0.2

6.0

±0.3

3.4

±0.3

2.54

±0.3

5.08

±0.5

1.0

±0.1

0.8

±0.1

0 to 0.4

1.1 max.

R0.5

R0.5

123

1:Base

2:Collector

3:Emitter

N Type Package (DS)