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PAH20016 Datasheet(PDF) 1 Page - Nihon Inter Electronics Corporation |
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PAH20016 Datasheet(HTML) 1 Page - Nihon Inter Electronics Corporation |
1 / 5 page THYRISTOR MODULE Maximum Ratings Approx Net Weight:500g Grade Parameter Parameter Parameter Parameter Symbol PAT/PAH20012 PAT/PAH20016 Unit Repetitive Peak Off-State Voltage VDRM 1200 1600 Non Repetitive Peak Off-State Voltage VDSM 1300 1700 V Repetitive Peak Reverse Voltage VRRM 1200 1600 Non Repetitive Peak Reverse Voltage VRSM 1300 1700 V Parameter Parameter Parameter Parameter Conditions Conditions Conditions Conditions Max Rated Max Rated Max Rated Max Rated Value Value Value Value Unit Average Rectified Output Current IO(AV) 50Hz Half Sine Wave condition Tc=75 °C 200 A RMS On-State Current IT(RMS) 314 A Surge On-State Current ITSM 50 Hz Half Sine Wave,1Pulse Non-Repetitive 4000 A I Squared t I2t 2msec to 10msec 80000 A2s Critical Rate of Turned-On Current di/dt VD=2/3VDRM, ITM=2•IO, Tj=125 °C IG=300mA, diG/dt=0.2A/ µs 100 A/ µs Peak Gate Power PGM 5 W Average Gate Power PG(AV) 1 W Peak Gate Current IGM 2 A Peak Gate Voltage VGM 10 V Peak Gate Reverse Voltage VRGM 5 V Operating JunctionTemperature Range Tjw -40 to +125 °C Storage Temperature Range Tstg -40 to +125 °C Isoration Voltage Viso Base Plate to Terminals, AC1min 2500 V Case mounting M6 Screw 2.5 to 3.5 Mounting torque Terminals Ftor M8 Screw 9.0 to 10.0 N•m Value per 1 Arm FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Anti-Parallel Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use PAT 2001 2 PAT 2001 6 PAT 2001 2 PAT 2001 6 PAT 2001 2 PAT 2001 6 PAT 2001 2 PAT 2001 6 PAH20012 PAH20016 PAH20012 PAH20016 PAH20012 PAH20016 PAH20012 PAH20016 OUTLINE DRAWING 200A / 1200V to 1600V PAT PAH |
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