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Q67000-S105 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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Q67000-S105 Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 7 page  BSS 295 Data Sheet 2 05.99 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ˚C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 125 K/W DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V(BR)DSS 50 - - V Gate threshold voltage VGS=VDS, ID = 1 mA VGS(th) 0.8 1.4 2 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj = 125 ˚C VDS = 30 V, VGS = 0 V, Tj = 25 ˚C IDSS - - - - 8 0.1 100 50 1 µA nA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 1.4 A VGS = 4.5 V, ID = 1.4 A RDS(on) - - 0.45 0.25 0.5 0.3 Ω |
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