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IXSR40N60BD1 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXSR40N60BD1 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 2 page 1 - 2 © 2000 IXYS All rights reserved IXYS reserves the right to change limits, test conditions, and dimensions. Symbol Test Conditions Maximum Ratings V CES T J = 25 °C to 150°C 600 V V CGR T J = 25 °C to 150°C; R GE = 1 MW 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25 °C70 A I C90 T C = 90 °C40 A I CM T C = 25 °C, 1 ms 150 A SSOA V GE= 15 V, TVJ = 125°C, RG = 22 W I CM = 80 A (RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V CES t SC V GE= 15 V, VCE = 360 V, TJ = 125°C 10 ms (SCSOA) R G = 22 W, non repetitive P C T C = 25 °C 170 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C V ISOL 50/60 Hz, RMS t = 1 min leads-to housing 2500 V~ Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Weight 5g V CES = 600 V I C25 = 70 A V CE(sat) = 2.2 V t fi(typ) = 120 ns Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. BV CES I C = 1 mA, V GE = 0 V 600 V V GE(th) I C = 4 mA, V CE = VGE 47 V I CES V CE = 0.8 • V CES T J = 25 °C 650 mA V GE = 0 V T J = 150°C5 mA I GES V CE = 0 V, V GE = ±20 V ±100 nA V CE(sat) I C = I T, VGE = 15 V 2.2 V 98672 (07/00) IGBT with Diode ISOPLUS 247TM (Electrically Isolated Backside) Short Circuit SOA Capability Advanced Technical Information Features • DCB Isolated mounting tab • Meets TO-247AD package Outline • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • AC motor speed control • DC servo and robot drives • DC choppers Advantages • Easy assembly • High power density • Very fast switching speeds for high frequency applications ISOPLUS 247TM G C Isolated backside* E 153432 E G = Gate, C = Collector, E = Emitter * Patent pending IXSR 40N60BD1 |
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