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IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25

°C to 150°C

600

V

V

CGR

T

J

= 25

°C to 150°C; R

600

V

V

GES

Continuous

±20

V

V

GEM

Transient

±30

V

I

C25

T

C

= 25

°C70

A

I

C90

T

C

= 90

°C40

A

I

CM

T

C

= 25

°C, 1 ms

150

A

SSOA

V

I

A

(RBSOA)

Clamped inductive load, L = 30

mH

@ 0.8 V

CES

t

SC

V

10

ms

(SCSOA)

R

P

C

T

C

= 25

°C

170

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS

t = 1 min leads-to housing

2500

V~

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

Weight

5g

V

CES

= 600 V

I

C25

= 70 A

V

CE(sat)

= 2.2 V

t

fi(typ)

= 120 ns

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

BV

CES

I

C

= 1 mA, V

600

V

V

GE(th)

I

C

= 4 mA, V

47

V

I

CES

V

CE

= 0.8 • V

CES

T

25

°C

650

mA

V

T

mA

I

GES

V

CE

= 0 V, V

±100

nA

V

CE(sat)

I

C

= I

2.2

V

98672 (07/00)

IGBT with Diode

(Electrically Isolated Backside)

Short Circuit SOA Capability

Advanced Technical Information

Features

• DCB Isolated mounting tab

• Meets TO-247AD package Outline

• High current handling capability

• MOS Gate turn-on

- drive simplicity

Applications

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode

power supplies

• AC motor speed control

• DC servo and robot drives

• DC choppers

Advantages

• Easy assembly

• High power density

• Very fast switching speeds for high

frequency applications

G

C

Isolated backside*

E 153432

E

G = Gate,

C = Collector,

E = Emitter

* Patent pending

IXSR 40N60BD1