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PBMB150B12 Datasheet(PDF) 2 Page - Nihon Inter Electronics Corporation

Part # PBMB150B12
Description  IGBT MODULE H-Bridge 150A 1200V
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Manufacturer  NIEC [Nihon Inter Electronics Corporation]
Direct Link  http://www.niec.co.jp
Logo NIEC - Nihon Inter Electronics Corporation

PBMB150B12 Datasheet(HTML) 2 Page - Nihon Inter Electronics Corporation

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PBMB150B12
0246
8
10
0
50
100
150
200
250
300
Collector to Emitter Voltage VCE (V)
Fig.1- Output Characteristics (Typical)
TC=25℃
10V
9V
12V
15V
VGE=20V
8V
7V
04
8
12
1620
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25℃
150A
IC=75A
300A
04
8
12
1620
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
IC=75A
150A
300A
TC=125℃
0
2
4
6
8
10
12
14
16
0
150
300
450
600
750
900
1050
1200
0
100
200
300
400
500
600
700
800
Total Gate Charge Qg (nC)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
VCE=600V
400V
200V
RL=4Ω
TC=25℃
0.1
0.2
0.5
1
25
1020
50
100
200
50
100
200
500
1000
2000
5000
10000
20000
50000
Collector to Emitter Voltage VCE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
Cies
Coes
Cres
VGE=0V
f=1MHZ
TC=25℃
025
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Collector Current IC (A)
Fig.6- Collector Current vs. Switching Time (Typical)
tOFF
tf
tr
tON
VCC=600V
RG= 3.0 Ω
VGE=±15V
TC=25℃


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