1

Power Transistors

2SB949, 2SB949A

Silicon PNP epitaxial planar type Darlington

For power amplification and switching

Complementary to 2SD1275 and 2SD1275A

q

q

High-speed switching

q

Full-pack package which can be installed to the heat sink with

one screw

Parameter

Collector to

base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

–60

–80

–60

–80

–5

–4

–2

35

2

150

–55 to +150

Unit

V

V

V

A

A

W

˚C

˚C

2SB949

2SB949A

2SB949

2SB949A

Ta=25

°C

Rank

Q

P

2000 to 5000 4000 to 10000

Unit: mm

Internal Connection

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

10.0

±0.2

5.5

±0.2

0.5

+0.2

–0.1

1.4

±0.1

1.3

±0.2

0.8

±0.1

2.54

±0.25

5.08

±0.5

2

13

2.7

±0.2

4.2

±0.2

φ3.1±0.1

Parameter

Collector cutoff

current

Collector cutoff

current

Emitter cutoff current

Collector to emitter

voltage

Forward current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

*

Conditions

min

–60

–80

1000

2000

typ

20

0.4

1.5

0.5

max

–1

–1

–2

–2

–2

10000

–2.8

–2.5

Unit

mA

mA

mA

V

V

V

MHz

µs

µs

µs

2SB949

2SB949A

2SB949

2SB949A

2SB949

2SB949A

B

C

E