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K4S560832D-TL1H Datasheet(PDF) 4 Page - Samsung semiconductor |
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K4S560832D-TL1H Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 11 page PC133/PC100 Unbuffered DIMM M366S3253DTS REV. 0.0 Jan. 2002 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 V Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V Storage temperature TSTG -55 ~ +150 °C Power dissipation PD 8 W Short circuit current IOS 50 mA Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. Note : DC OPERATING CONDITIONS AND CHARACTERISTICS CAPACITANCE (VDD = 3.3V, TA = 23 °C, f = 1MHz, VREF = 1.4V ± 200 mV) Pin Symbol Min Max Unit Address (A0 ~ A12, BA0 ~ BA1) RAS, CAS, WE CKE (CKE0) Clock (CLK0, CLK2) CS (CS0, CS2) DQM (DQM0 ~ DQM7) DQ (DQ0 ~ DQ63) CADD CIN CCKE CCLK CCS CDQM COUT 30 30 30 25 16 8 6 40 40 40 30 25 10 8 pF pF pF pF pF pF pF Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70 °C) Parameter Symbol Min Typ Max Unit Note Supply voltage VDD, VDDQ 3.0 3.3 3.6 V Input logic high voltage VIH 2.0 3.0 VDDQ+0.3 V 1 Input logic low voltage VIL -0.3 0 0.8 V 2 Output logic high voltage VOH 2.4 - - V IOH = -2mA Output logic low voltage VOL - - 0.4 V IOL = 2mA Input leakage current ILI -10 - 10 uA 3 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns. 2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns. 3. Any input 0V ≤ VIN ≤ VDDQ. Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. Notes : |
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