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SUM110N04-02L Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUM110N04-02L Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page SUM110N04-02L Vishay Siliconix New Product www.vishay.com 2 Document Number: 70763 S-04970—Rev. B, 29-Oct-01 SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 40 Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V 100 nA VDS = 40 V, VGS = 0 V 1 m Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V, TJ = 125_C 50 mA DSS VDS = 40 V, VGS = 0 V, TJ = 200_C 10 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 120 A VGS = 10 V, ID = 30 A 0.00185 0.0023 a VGS = 4.5 V, ID = 20 A 0.0031 0.0038 W Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 0.0037 W VGS = 10 V, ID = 30 A, TJ = 200_C 0.0046 Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 S Dynamicb Input Capacitance Ciss 7300 Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1380 pF Reverse Transfer Capacitance Crss 930 Total Gate Chargec Qg 165 250 Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 110 A 25 nC Gate-Drain Chargec Qgd DS GS D 55 Turn-On Delay Timec td(on) 30 45 Rise Timec tr VDD = 30 V, RL = 0.27 W 80 120 Turn-Off Delay Timec td(off) VDD = 30 V, RL = 0.27 W ID ^ 110 A, VGEN = 10 V, RG = 2.5 W 155 230 ns Fall Timec tf 120 180 Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 110 Pulsed Current ISM 240 A Forward Voltagea VSD IF = 85 A, VGS = 0 V 1.1 1.5 V Reverse Recovery Time trr 60 90 ns Peak Reverse Recovery Current IRM(REC) IF = 85 A, di/dt = 100 A/ms 2.6 4 A Reverse Recovery Charge Qrr F m 0.08 0.15 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. |
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