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TPS2115APWRG4 Datasheet(PDF) 3 Page - Texas Instruments |
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TPS2115APWRG4 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 20 page TPS2114A TPS2115A SBVS044A − MARCH 2004 − REVISED MAY 2004 www.ti.com 3 ELECTRICAL CHARACTERISTICS over recommended operating junction temperature range, VI(IN1) = VI(IN2) = 5.5 V, RILIM = 400 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS TPS2114A TPS2115A UNIT PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT POWER SWITCH (1) TJ = 25°C, VI(IN1) = VI(IN2) = 5.0 V 120 140 84 110 (1) Drain-source TJ = 25°C, IL = 500 mA VI(IN1) = VI(IN2) = 3.3 V 120 140 84 110 m Ω rDS(on)(1) Drain-source on-state resistance IL = 500 mA VI(IN1) = VI(IN2) = 2.8 V 120 140 84 110 m Ω rDS(on)(1) on-state resistance (INx−OUT) TJ = 125°C, VI(IN1) = VI(IN2) = 5.0 V 220 150 (INx−OUT) TJ = 125°C, IL = 500 mA VI(IN1) = VI(IN2) = 3.3 V 220 150 m Ω IL = 500 mA VI(IN1) = VI(IN2) = 2.8 V 220 150 m (1) The TPS211xA can switch a voltage as low as 1.5 V as long as there is a minimum of 2.8 V at one of the input power pins. In this specific case, the lower supply voltage has no effect on the IN1 and IN2 switch on-resistances. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT LOGIC INPUTS (D0 AND D1) VIH High-level input voltage 2 V VIL Low-level input voltage 0.7 V Input current at D0 or D1 D0 or D1 = High, sink current 1 µA Input current at D0 or D1 D0 or D1 = Low, source current 0.5 1.4 5 µA SUPPLY AND LEAKAGE CURRENTS D1 = High, D0 = Low (IN1 active), VI(IN1) = 5.5 V, VI(IN2) = 3.3 V, IO(OUT) = 0 A 55 90 Supply current from IN1 D1 = High, D0 = Low (IN1 active), VI(IN1) = 3.3 V, VI(IN2) = 5.5 V, IO(OUT) = 0 A 1 12 µA Supply current from IN1 (operating) D0 = D1 = Low (IN2 active), VI(IN1) = 5.5 V, VI(IN2) = 3.3 V, IO(OUT) = 0 A 75 µA D0 = D1 = Low (IN2 active), VI(IN1) = 3.3 V, VI(IN2) = 5.5 V, IO(OUT) = 0 A 1 D1 = High, D0 = Low (IN1 active), VI(IN1) = 5.5 V, VI(IN2) = 3.3 V, IO(OUT) = 0 A 1 Supply current from IN2 D1 = High, D0 = Low (IN1 active), VI(IN1) = 3.3 V, VI(IN2) = 5.5 V, IO(OUT) = 0 A 75 µA Supply current from IN2 (operating) D0 = D1 = Low (IN2 active), VI(IN1) = 5.5 V, VI(IN2)= 3.3 V, IO(OUT) = 0 A 1 12 µA D0 = D1 = Low (IN2 active), VI(IN1) = 3.3 V, VI(IN2) = 5.5 V, IO(OUT) = 0 A 55 90 Quiescent current from IN1 D0 = D1 = High (inactive), VI(IN1) = 5.5 V, VI(IN2) = 3.3 V, IO(OUT) = 0 A 0.5 2 µA Quiescent current from IN1 (STANDBY) D0 = D1 = High (inactive), VI(IN1) = 3.3 V, VI(IN2) = 5.5 V, IO(OUT) = 0 A 1 µA Quiescent current from IN2 D0 = D1 = High (inactive), VI(IN1) = 5.5 V, VI(IN2) = 3.3 V, IO(OUT) = 0 A 1 µA Quiescent current from IN2 (STANDBY) D0 = D1 = High (inactive), VI(IN1) = 3.3 V, VI(IN2) = 5.5 V, IO(OUT) = 0 A 0.5 2 µA Forward leakage current from IN1 (measured from OUT to GND) D0 = D1 = High (inactive), VI(IN1) = 5.5 V, IN2 open, VO(OUT) = 0 V (shorted), TJ = 25°C 0.1 5 µA Forward leakage current from IN2 (measured from OUT to GND) D0 =D1= High (inactive), VI(IN2) = 5.5 V, IN1 open, VO(OUT) = 0 V (shorted), TJ = 25°C 0.1 5 µA Reverse leakage current to INx (measured from INx to GND) D0 = D1 = High (inactive), VI(INx) = 0 V, VO(OUT) = 5.5 V, TJ = 25°C 0.3 5 µA |
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