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2SC3795 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SC3795 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Power Transistors 2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed switching q High collector to base voltage VCBO q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg Ratings 800 900 800 900 500 8 10 5 3 40 2 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 2SC3795 2SC3795A 2SC3795 2SC3795A TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO IEBO VCEO(sus) * hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 0.2A, L = 25mH VCE = 5V, IC = 0.1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = – 0.6A, VCC = 200V min 500 15 8 typ 8 max 100 100 100 1 1.5 1 1.2 3 1 1.2 Unit µA µA V V V MHz µs µs µs 2SC3795 2SC3795A 2SC3795 2SC3795A 2SC3795 2SC3795A Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 *V CEO(sus) Test circuit X L 25mH 15V 1 Ω Y G 6V 120 Ω 50/60Hz mercury relay |
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