MAX3355E datasheet(2/11 Pages) MAXIM

Part #	MAX3355E

Description	/-15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP

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Manufacturer	MAXIM [Maxim Integrated Products]

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±15kV ESD-Protected USB On-the-Go

Charge Pump and Comparators in UCSP

2

_______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

(VCC = +2.6V to +5.5V, VL = +1.65V to VCC, C1 = 0.1µF, VCC decoupled with 1µF capacitor to GND, VL decoupled with 0.1µF

capacitor to GND, CLOAD = 1µF (min), ESRLOAD = 1

Ω (max), TA = TMIN to TMAX. Typical values are at VCC = +3.0V, VL = 1.8V, TA =

+25°C, unless otherwise noted.) (Notes 1, 2)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

(All voltages referenced to GND)

VCC, VL, VBUS, ID_IN.............................................-0.3V to +6.0V

C+..................................................................(VCC - 0.3V) to +6V

C-................................................................-0.3V to (VCC + 0.3V)

OFFVBUS, SHDN, STATUS1,

STATUS2, ID_OUT ....................................-0.3V to (VL + 0.3V)

VBUS Short Circuit to GND .........................................Continuous

Output Current (all other pins)..........................................±15mA

Continuous Power Dissipation (TA = +70°C)

4 x 3 UCSP (derate 6.5mW/°C above +70°C) .............520mW

14-Pin TSSOP (derate 9.1mW/°C above +70°C) .........727mW

Operating Temperature Range ...........................-40°C to +85°C

Storage Temperature Range .............................-65°C to +150°C

Junction Temperature ......................................................+150°C

Lead Temperature (soldering, 10s) .................................+300°C

Bump Temperature (soldering)

Infrared (15s) ...............................................................+200°C

Vapor Phase (20s) .......................................................+215°C

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Supply Voltage

VCC

2.6

5.5

V

Logic Supply Voltage

VL

1.65

VCC

V

Logic Supply Current

IL

100

µA

No activity on VBUS; comparator and

reference active

200

µA

Operating Supply Current

ICC

Device A configured,

OFFVBUS = VL,

ILOAD = 8mA, charge pump on

20

mA

Device B configured,

SHDN = GND

1

Shutdown Supply Current

ICCSHDN

Device A configured,

SHDN = GND

30

µA

Thermal-Shutdown Protection

Threshold

Device A configured,

OFFVBUS = VL,

charge pump on

+150

°C

Thermal-Shutdown Protection

Hysteresis

Device A configured,

OFFVBUS = VL,

charge pump on

+20

°C

LOGIC INPUTS AND OUTPUTS

VOH

ISOURCE = +1mA

2/3 x VL

STATUS1, STATUS2, ID_OUT

Output Voltage

VOL

ISINK = -1mA

0.4

V

VIH

2/3 x VL

OFFVBUS, SHDN Input Voltage

VIL

0.4

V

Input Leakage Current

ILKG

OFFVBUS, SHDN = GND or VL

±1

µA

VBUS OUTPUT VOLTAGE: DEVICE A CONFIGURED

ILOAD = 0 to 8mA, CLOAD = 1µF,

OFFVBUS = VL, ID_IN = GND

4.63

5.25

VBUS Output Voltage

No load, CLOAD = 1µF, OFFVBUS = VL,

ID_IN = GND

4.8

V

VBUS Leakage Voltage

OFFVBUS = GND

200

mV

VBUS Sink Current

OFFVBUS = GND, VBUS = +6.0V

150

µA

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