2SB1668

Transistors

1/1

For Power amplification (

−100V, −8A)

2SB1668

Structure

External dimensions (Unit : mm)

PNP Silicon Epitaxial Planar Transistor

(Darlington connection)

TO-220FN

(1)Base

(2)Collector

(3)Emitter

4.5

2.8

0.75

φ3.2

(2)(3)

(1)

0.8

2.54

2.6

2.54

1.3

1.2

10.0

Features

2) Built-in resistors between base and emitter.

3) Damper diode is incorporated.

Applications

Complements

Relay drive

Motor drive

PNP

2SB1668

NPN

2SD2607

Absolute maximum ratings (Ta=25

°C)

Package

Code

Taping

Basic ordering unit (pieces)

2SB1668

−

500

Type

Power dissipation

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Range of storage temperature

Symbol

Tj

Tstg

Limits

−100

−100

−7

−8

2

30

150

−55 to +150

Unit

V

V

V

A

DC

Pulse

−10

A

W(Ta=25

°C)

W(Tc=25

°C)

°C

°C

∗1

∗1 t=100ms

Electrical characteristics (Ta=25

°C)

Parameter

Conditions

Collector-base breakdown voltage

−50µA

Collector-emitter breakdown voltage

−5mA

Emitter-base breakdown voltage

−5mA

Collector cut-off current

−100V

Emitter cut-off current

−5V

DC current gain

Transition frequency

Collector output capacitance

Symbol

Cob

Min.

−100

−100

−7

−

−

1

−

−

Typ.

−

−

−

−

−

−

12

90

Max.

−

−

−

−10

−3

20

−

−

Unit

V

V

V

µA

mA

Collector-emitter saturation voltage

−3A /−6mA

−−

1.5

V

K

MHz

pF