1

Transistor

2SC3904

Silicon NPN epitaxial planer type

For 2GHz band low-noise amplification

q

q

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

JEDEC:TO–236

2:Emitter

EIAJ:SC–59

3:Collector

Mini Type Package

2.8

+0.2

–0.3

1.5

+0.25

–0.05

0.65

±0.15

0.65

±0.15

3

1

2

0.4

±0.2

0.1 to 0.3

Symbol

Ratings

15

10

2

65

200

150

–55 ~ +150

Unit

V

V

V

mA

mW

˚C

˚C

Parameter

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Transition frequency

Collector output capacitance

Foward transfer gain

Maximum unilateral power gain

Noise figure

Symbol

2

GUM

NF

Conditions

min

50

7.0

7

typ

120

8.5

0.6

9

10

2.2

max

1

1

300

1

3

Unit

µA

µA

GHz

pF

dB

dB

dB

Marking symbol :

3S