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EMD28 Datasheet(PDF) 3 Page - Rohm |
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EMD28 Datasheet(HTML) 3 Page - Rohm |
3 / 6 page EMD28 Transistors 3/5 Electrical characteristics (Ta=25 °C) DTr1 Parameter Symbol Min. Typ. Max. Unit Conditions Resistance ratio R2/R1 1.7 2.1 2.6 −− − Vl(off) − −−0.3 V VCC = −5V / Io= −100uA Output voltage Vo(on) − −70 −300 mV IO = −100mA, II= −5mA Input voltage II − −−1.8 mA VI = −5V Input current IO(off) −− −0.5 VCC = −12V / VI=0V Output current GI 140 − − VO = −2V / Io= −100mA DC current gain fT − − MHz VCE = −10V / IE=5mA, f=100MHz Transition frequency ∗ R1 3.29 4.7 6.11 k Ω Input resistance 260 µA − VI(on) −2.5 −− V VO = −0.3V / Io= −20mA ∗ Characteristics of built-in transistor. DTr2 Parameter Symbol Min. Typ. Max. Unit Conditions Resistance ratio R2/R1 0.8 1 1.2 −− − Vl(off) − − 0.5 V VCC =5V / Io=100uA Output voltage Vo(on) − 100 300 mV IO =10mA, II=0.5mA Input voltage II − − 0.18 mA VI =5V Input current IO(off) −− 0.5 VCC =50V / VI=0V Output current GI 68 − − VO =5V / Io=5mA DC current gain fT − − MHz VCE =10V / IE= −5mA, f=100MHz Transition frequency ∗ R1 32.9 47 61.1 k Ω Input resistance 250 µA − VI(on) 3 −− V VO =0.3V / Io=2mA ∗ Characteristics of built-in transistor. |
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