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RB085B-30 Datasheet(PDF) 1 Page - Rohm |
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RB085B-30 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page RB085B-30 Diodes Rev.B 1/3 Schottky barrier diode RB085B-30 Applications CPD 1.6 2.3 1.6 2.3 6.0 Symbol Min. Typ. Max. Unit Forward voltage VF - - 0.48 V IF=4.0A Reverse current IR - - 300 µA VR=30V Thermal impedance θjc - - 6.0 ℃ /W junction to case Conditions Parameter General rectification Features 1) Power mold type. (CPD) 2) Low VF 3) High reliability Construction Silicon epitaxial planar External dimensions (Unit : mm) Land size figure (Unit : mm) ① ROHM : CPD ① Manufacture Date JEITA : SC-63 0.5±0.1 2.3±0.2 0.1 0.5±0.1 1.0±0.2 6.5±0.2 5.1±0.2 0.1 C0.5 0.9 0.75 0.65±0.1 2.3±0.2 2.3±0.2 (1) (2) (3) Structure Taping dimensions (Unit : mm) 6.8±0.1 8.0±0.1 4.0±0.1 2.0±0.05 φ1.55±0.1 0 2.7±0.2 φ3.0±0.1 0.4±0.1 8.0±0.1 TL Absolute maximum ratings (Ta=25 °C) Symbol Unit VRM V VR V Io A IFSM A Tj ℃ Tstg ℃ Limits 30 10 35 Parameter Electrical characteristic (Ta=25 °C) Reverse voltage (DC) verage rectified forward current(*1) everse voltage (repetitive peak) orward current surge peak (60Hz・1cyc)(*1) 35 nction temperature torage temperature 150 *1)Rating of per diode : Io/2 -40 to +150 A R F Ju S ( |
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