October 2002
4
10.29.02
ISO9001
T73227
27 MHz VCXO Clock Generator IC
Table 3: Operating Conditions
PARAMETER
SYMBOL
CONDITIONS/DESCRIPTION
MIN.
TYP.
MAX.
UNITS
Core Supply Voltage (VDD)
VDD
3.15
3.3
3.45
V
VCXO Control Voltage, VIN
VIN
0
VDD
V
Ambient Operating Temperature Range
TA
0
70
°C
Crystal Resonator Frequency
fXTAL
Fundamental Mode
20
27
30
MHz
Crystal Load Capacitance
CL(xtal)
AT cut
20
pF
Table 4: DC Electrical Specifications
Unless otherwise stated, VDD = 3.15V to 3.45V , no load on any output, and ambient temperature range TA = 0°C to 70°C.
PARAMETER
SYMBOL
CONDITIONS/DESCRIPTION
MIN.
TYP.
MAX.
UNITS
Overall
Supply Current, Dynamic, with no load
IDD
fXTAL = 27MHz
25
mA
Output High Voltage
VOH
IOH = -12mA
2.4
V
Output Low Voltage
VOL
IOL = 12mA
0.4
V
Voltage Controlled Crystal Oscillator - VDD=3.3V
Crystal Loading Capacitance
CL(xtal)
As seen by a crystal connected to XIN and
XOUT (@ VXTUNE = 1.65V)
20
pF
Crystal Gamma
CO/C1
240
VCXO Tuning Range
fXTAL = 27MHz; CL(xtal) = 20pF; gamma = 240
250
ppm
VCXO Tuning Characteristic
Note: positive
∆F for positive ∆V
75
ppm/V
Crystal ESR
50
Ω
Table 5: AC Timing Specifications
Unless otherwise stated, VDD = 3.15V to 3.45V, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk ( * ) represent nominal characterization
data and are not production tested to any specific limits.
PARAMETER
SYMBOL
CONDITIONS/DESCRIPTION
MIN.
TYP.
MAX.
UNITS
Clock Output (CLK)
Duty Cycle *
Ratio of high pulse width (as measured from rising
edge to next falling edge at VDD/2) to one clock period
40
60
%
Jitter, Period (peak-peak) *
tj(∆P)
From rising edge to next rising edge at VDD/2, CL =
10pF
150
ps
Rise Time *
tr
Measured 0.8V to 2.0V, CL = 10pF
1.5
ns
Fall Time *
tf
Measured 2.0V to 0.8V; CL = 10pF
1.5
ns
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