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SP8M3 Datasheet(PDF) 2 Page - Rohm |
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SP8M3 Datasheet(HTML) 2 Page - Rohm |
2 / 6 page SP8M3 Transistors Rev.A 2/5 N-ch Electrical characteristics (Ta=25 °C) Parameter Symbol IGSS Yfs Min. −− 10 µAVGS=20V, VDS=0V VDD 15V Typ. Max. Unit Conditions V(BR) DSS 30 −− VID =1mA, VGS=0V IDSS −− 1 µAVDS=30V, VGS=0V VGS (th) 1.0 − 2.5 V VDS =10V, ID=1mA − 36 51 ID =5.0A, VGS=10V RDS (on) − 52 73 m Ω ID=5.0A, VGS=4.5V − 58 82 ID =5.0A, VGS=4V 3.0 −− SID =5.0A, VDS=10V Ciss − 230 − pF VDS =10V Coss − 80 50 − pF VGS =0V Crss − 6 − pF f =1MHz VGS =10V RL =6.0Ω RG =10Ω td (on) − 8 − ns tr − 22 − ns td (off) − 5 − ns tf − 3.9 − ns Qg − 1.1 5.5 nC Qgs − 1.4 − nC VGS =5V Qgd −− nC ID =5.0A ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ID =2.5A, VDD 15V Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Body diode characteristics (Source-Drain Characteristics) (Ta=25 °C) VSD −− 1.2 V IS =6.4A, VGS=0V Parameter Symbol Min. Typ. Max. Unit Conditions ∗ Forward voltage ∗Pulsed |
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