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SMT810 High Performance Infrared TOP IR LED
SMT810 consists of an AlGaAs LED mounted on the lead frame as TOP LED package
and is 10mW typical of output power.
It emits a spectral band of radiation at 810nm.
♦Outer dimension（Unit:mm）
♦Specifications
1) Product Name
TOP IR LED
2) Type No.
SMT810
3) Chip
(1) Chip Material
AlGaAs
(2) Peak Wavelength
810ｎｍ ｔｙｐ.
4) Package
(1) Lead Frame Die
Silver Plated
(2) Package Resin
PPA Resin
(3) Lens
Epoxy Resin
♦Absolute Maximum Rating
Item
Symbol
Maximum Rated Value
Unit
Ambient Temperature
Power Dissipation
PD
190
mW
Ta=25°C
Forward Current
IF
100
mA
Ta=25°C
Pulse Forward Current
IFP
500
mA
Ta=25°C
Reverse Voltage
VR
5
V
Ta=25°C
Operating Temperature
TOPR
-20 ~ +80
°C
Storage Temperature
TSTG
-30 ~ +80
°C
Soldering Temperature
TSOL
240
°C
‡
Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡
Soldering condition: Soldering condition must be completed within 3 seconds at 230°C
♦Electro-Optical Characteristics [Ta=25°C]
Item
Symbol
Condition
Minimum
Typical
Maximum
Unit
Forward Voltage
VF
IF=50mA
1.60
1.80
V
Reverse Current
IR
VR=5V
10
uA
Total Radiated Power
PO
IF=50mA
5.0
10.0
mW
Radiant Intensity
IE
IF=50mA
3.0
6.0
mW/sr
Peak Wavelength
λP
IF=50mA
810
nm
Half Width
Δλ
IF=50mA
40
nm
Viewing Half Angle
θ 1/2
IF=50mA
±55
deg.
Rise Time
tr
ＩF=50mA
60
ns
Fall Time
tf
ＩF=50mA
40
ns
‡
Total Radiated Power is measured by Photodyne #500
‡
Radiant Intensity is measured by Tektronix J-6512.
Marubeni America Corporation
3945 Freedom Circle, Suite 1000, Santa Clara, CA 95054
408-330-0650 (Ext. 323), 408-330-0655 (Fax), sales@tech-led.com
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