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US5L11 Datasheet(PDF) 3 Page - Rohm

Part # US5L11
Description  General purpose transistor (isolated transistor and diode)
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

US5L11 Datasheet(HTML) 3 Page - Rohm

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US5L11
Transistors
Rev.A
3/4
Electrical characteristic curves
Tr1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
10
1000
100
Ta
=100°C
Ta
=−40°C
Ta
=25°C
VCE
=−2V
Pulsed
Fig.1 DC current gain
vs. collector current
0.1
0.01
10
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Ta
=25°C
Ta
=25°C
Ta
=−40°C
Ta
=−40°C
Ta
=100°C
Ta
=100°C
VBE(sat)
VCE(sat)
IC/IB
=20/1
Pulsed
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
0.001
0.01
0.1
1
10
Ta
=25°C
Pulsed
IC/IB
=10/1
IC/IB
=20/1
IC/IB
=50/1
Fig.3 Collector-emitter saturation voltage
vs. collector current
0
0.5
1
1.5
BASE TO EMITTER CURRENT : VBE (V)
0.001
0.01
1
0.1
VCE
=−2V
Pulsed
Ta
=100°C
Ta
=25°C
Ta
=−40°C
Fig.4 Grounded emitter propagation
characteristics
0.01
0.1
1
EMITTER CURRENT : IE (A)
10
1000
100
Ta
=25°C
VCE
=−2V
f
=100MHz
Fig.5 Gain bandwidth product
vs. emitter current
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
1
10
1000
100
Ta
=25°C
VCE
=−5V
IC/IB
=20/1
tstg
tdon
tr
tf
Fig.6 Switching time
1
10
100
0.1
1
10
100
f
=1MHz
IC
=0A
Ta
=25
°C
Cib
Cob
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)


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