 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRG4ZC70UD Datasheet(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRG4ZC70UD Datasheet(HTML) 2 Page - International Rectifier |
|
|
2 / 10 page  IRG4ZC70UD 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 430 640 IC = 50A Qge Gate - Emitter Charge (turn-on) — 48 72 nC VCC = 400V see figure 8 Qgc Gate - Collector Charge (turn-on) — 130 190 VGE = 15V td(on) Turn-On Delay Time — 71 — TJ = 25°C tr Rise Time — 41 — ns IC = 50A, VCC = 480V td(off) Turn-Off Delay Time — 250 370 VGE = 15V, RG = 5.0Ω tf Fall Time — 110 220 Energy losses include "tail" and Eon Turn-On Switching Loss — 1.59 — diode reverse recovery. Eoff Turn-Off Switching Loss — 1.78 — mJ see figures 9, 10, 18 Ets Total Switching Loss — 3.37 4.7 td(on) Turn-On Delay Time — 68 — TJ = 150°C, see figures 11, 18 tr Rise Time — 43 — ns IC = 50A, VCC = 480V td(off) Turn-Off Delay Time — 370 — VGE = 15V, RG = 5.0Ω tf Fall Time — 130 — Energy losses include "tail" and Ets Total Switching Loss — 4.5 — mJ diode reverse recovery. LE Internal Emitter Inductance — 2.0 — nH Cies Input Capacitance — 7400 — VGE = 0V Coes Output Capacitance — 730 — pF VCC = 30V see figure 7 Cres Reverse Transfer Capacitance — 90 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 90 140 ns TJ = 25°C see figure — 120 180 TJ = 125°C 14 IF = 50A Irr Diode Peak Reverse Recovery Current — 7.3 11 A TJ = 25°C see figure —11 16 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 360 550 nC TJ = 25°C see figure — 780 1200 TJ = 125°C 16 di/dt = 200Aµs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 370 — A/µs TJ = 25°C see figure During tb — 220 — TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.36 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 1.49 1.9 IC = 50A VGE = 15V — 1.80 — V IC = 100A see figure 2, 5 — 1.47 — IC = 50A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -7.6 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 34 52 — S VCE = 100V, IC = 50A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 1.3 mA VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.24 1.5 V IC = 50A see figure 13 — 1.16 1.3 IC = 50A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) |
Similar Part No. - IRG4ZC70UD |
|
Similar Description - IRG4ZC70UD |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
