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GWM220-004P3 Datasheet(PDF) 1 Page - IXYS Corporation |
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GWM220-004P3 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 2 page © 2005 IXYS All rights reserved 1 - 2 GWM 220-004P3 Three phase full bridge with Trench MOSFETs in DCB isolated high current package Applications AC drives • in automobiles - electric power steering - starter generator • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment Features • MOSFETs in trench technology: - logic level gate control - low R DSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer V DSS = 40 V R DSon = 2.0 m Ω Ω Ω Ω Ω I D25 = 190 A IXYS reserves the right to change limits, test conditions and dimensions. MOSFETs Symbol Conditions Maximum Ratings V DSS T VJ = 25°C to 150°C 40 V V GS ±20 V I D25 T C = 25°C 190 A I D90 T C = 90°C 145 A I F25 T C = 25°C (diode) 125 A I F90 T C = 90°C (diode) 80 A Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. R DSon on chip level at T VJ = 25°C 2.0 2.6 m Ω V GS = 10 V T VJ = 125°C 3.2 m Ω V GSth V DS = 20 V; ID = 1 mA 2 4 V I DSS V DS = VDSS; VGS = 0 V; TVJ = 25°C 1 µA T VJ = 125°C 0.1 mA I GSS V GS = ±20 V; VDS = 0 V 0.2 µA Q g 94 nC Q gs 18 nC Q gd 29 nC t d(on) 40 ns t r 85 ns t d(off) 140 ns t f 90 ns V F (diode) I F = 110 A; VGS= 0 V 1.0 1.6 V t rr (diode) I F = 20 A; -di/dt = 100 A/µs; VDS= 20 V 70 ns R thJC 0.85 K/W R thJH with heat transfer paste 1.1 K/W V GS= 10 V; VDS = 14 V; ID = 25 A V GS= 10 V; VDS = 30 V; I D = 25 A; RG = 10 Ω L + G1 S1 G2 S2 L - G3 S3 G4 S4 G5 S5 G6 S6 L1 L2 L3 Preliminary data |
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