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IRHLF7930Z4 Datasheet(PDF) 2 Page - International Rectifier |
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IRHLF7930Z4 Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRHLF7970Z4 Pre-Irradiation 2 www.irf.com For footnotes refer to the last page Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — -1.6 ISM Pulse Source Current (Body Diode) ➀ — — -6.4 VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -1.6A, VGS = 0V ➃ trr Reverse Recovery Time — — 50 ns Tj = 25°C, IF =-1.6A, di/dt ≤ -100A/µs QRR Reverse Recovery Charge — — 50 nC VDD ≤ -25V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -60 — — V VGS = 0V, ID = -250µA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.06 — V/°C Reference to 25°C, ID = -1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 1.2 Ω VGS = -4.5V, ID = -1.0A Resistance VGS(th) Gate Threshold Voltage -1.0 — -2.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 1.0 — — S ( ) VDS = -10V, IDS = -1.0A ➃ IDSS Zero Gate Voltage Drain Current — — -1.0 VDS= -48V ,VGS=0V — — -10 VDS = -48V, VGS = 0V, TJ =125°C IGSS Gate-to-Source Leakage Forward — — -100 VGS = -10V IGSS Gate-to-Source Leakage Reverse — — 100 VGS =10V Qg Total Gate Charge — — 4.0 VGS = -4.5V, ID = -1.6A Qgs Gate-to-Source Charge — — 1.5 nC VDS = -30V Qgd Gate-to-Drain (‘Miller’) Charge — — 1.8 td(on) Turn-On Delay Time — — 18 VDD = -30V, ID = -1.6A, tr Rise Time — — 20 VGS =-4.5V, RG = 24Ω td(off) Turn-Off Delay Time — — 15 tf Fall Time — — 25 LS + LD Total Inductance — 7.0 — Measured from Drain lead (6mm /0.25in from package) to Source lead(6mm/0.25in from packge)with Source wire internally bonded from Source pin to Drain pad Ciss Input Capacitance — 177 — VGS = 0V, VDS = -25V Coss Output Capacitance — 40 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 8.0 — nA ➃ nH ns µA Rg Gate Resistance — 28 — Ω f = 5.0MHz, open drain Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 25 °C/W Note: Corresponding Spice and Saber models are available on International Rectifier Web site. |
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