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2SD1273A Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SD1273A Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Power Transistors 2SD1273, 2SD1273A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Complementary to 2SB1299 s Features q High foward current transfer ratio hFE q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg Ratings 80 100 60 80 6 6 3 1 40 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 2SD1273 2SD1273A 2SD1273 2SD1273A TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Symbol ICBO ICEO IEBO VCEO hFE * VCE(sat) fT Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE = 40V, IB = 0 VCB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz min 60 80 500 typ 50 max 100 100 100 100 2500 1 Unit µA µA µA V V MHz 2SD1273 2SD1273A 2SD1273 2SD1273A *h FE Rank classification Rank Q P O hFE 500 to 1000 800 to 1500 1200 to 2500 Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification. |
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