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2SD1474 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # 2SD1474
Description  Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD1474 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SD1474
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
s Features
q
High forward current transfer ratio hFE which has satisfactory
linearity
q
High emitter to base voltage VEBO
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
100
60
15
12
6
3
40
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE
*
VCE(sat)
fT
ton
tstg
tf
Conditions
VCB = 100V, IE = 0
VEB = 15V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 1A
IC = 5A, IB = 0.1A
VCE = 12V, IC = 0.5A, f = 10MHz
IC = 5A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
min
60
300
typ
30
0.3
1.5
0.6
max
100
100
2000
0.5
Unit
µA
µA
V
V
MHz
µs
µs
µs
*h
FE Rank classification
Rank
Q
P
hFE
300 to 1200 800 to 2000
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
φ3.1±0.1


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