1

Power Transistors

2SD1752, 2SD1752A

Silicon NPN epitaxial planar type

For power amplification and low-voltage switching

Complementary to 2SB1148 and 2SB1148A

q

q

High-speed switching

q

q

q

I type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

Parameter

Collector to

base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

40

50

20

40

5

20

10

15

1.3

150

–55 to +150

Unit

V

V

V

A

A

W

˚C

˚C

2SD1752

2SD1752A

2SD1752

2SD1752A

Ta=25

°C

Parameter

Collector cutoff

current

Emitter cutoff current

Collector to emitter

voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Turn-on time

Storage time

Fall time

Symbol

*

Conditions

min

20

40

45

90

typ

120

200

0.3

0.4

0.1

max

50

50

50

260

0.6

1.5

Unit

µA

µA

V

V

V

MHz

pF

µs

µs

µs

2SD1752

2SD1752A

2SD1752

2SD1752A

Rank

Q

P

90 to 180

130 to 260

Unit: mm

1:Base

2:Collector

3:Emitter

I Type Package

Unit: mm

1:Base

2:Collector

3:Emitter

I Type Package (Y)

7.0

±0.3

3.0

±0.2

3.5

±0.2

4.6

±0.4

2

13

1.1

±0.1

0.75

±0.1

2.3

±0.2

0.85

±0.1

0.4

±0.1

7.0

±0.3

0.75

±0.1

2.3

±0.2

4.6

±0.4

1.1

±0.1

2.0

±0.2

0.9

±0.1

3.5

±0.2

3.0

±0.2

123

0 to 0.15

0 to 0.15

2.5

0.5 max.