PWRLITE LU1014D
High Performance N-Channel POWERJFETTM with PN Diode
Features
Superior gate charge x Rdson product (FOM)
Trench Power JFET with low threshold voltage Vth.
Device fully “ON” with Vgs = 0.7V
Optimum for “Low Side” Buck Converters
Excellent for high frequency dc/dc converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
Applications
DC-DC Converters
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
VRM Modules
IPAK Lead-free Pin Assignments
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. A PN Diode is added for
applications where a freewheeling diode is required.
This product has tin plated leads.
1 2
3
Case TO251 (IPAK)
1 2
3
Case TO251 (IPAK)
N – Channel PowerJFET
with PN Diode
S
D
G
S
D
G
Pin Definitions
Pin Number
Pin Name
Pin Function Description
Product Summary
1
Gate
Gate. Transistor Gate
VDS (V)
Rdson (
Ω)
ID (A)
2, 4
Drain
Drain. Transistor Drain
24V
0.0065
501
3
Source
Source. Transistor Source
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Units
Drain-Source Voltage
VDS
24
V
Gate-Source Voltage
VGS
-12
V
Gate-Drain Voltage
VGD
-28
V
Continuous Drain Current
ID
501
A
Pulsed Drain Current
ID
100
A
Single Pulse Drain-to-Source Avalanche Energy at 25
°C
(VDD= 6VDC, IL=60APK, L=0.3mH, RG=100 Ω)
EAS
200
mJ
Junction Temperature
TJ
-55 to 150
°C
°C
Storage Temperature
TSTG
-65 to 150
°C
°C
Lead Soldering Temperature, 10 seconds
T
260
°C
°C
Power Dissipation (Derated at 25
°C)
PD
69
W
LD1014D Rev 1.05 03-05