S3F8289 datasheet(4/369 Pages) SAMSUNG

Part #	S3F8289

Description	8-BIT CMOS MICROCONTROLLERS

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Manufacturer	SAMSUNG [Samsung semiconductor]

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REVISION DESCRIPTIONS

1. CHAPTHER 20 ELECTRICAL DATA

Table 20-15. Internal Flash ROM Electrical Characteristics (page 20-15)

(TA = –25 °C to + 85 °C, VDD = 2.0 V to 3.6 V)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Programming Time (1)

Ftp

–

30

–

µs

Chip Erasing Time (2)

Ftp1

50

–

ms

Sector Erasing Time (3)

Ftp2

10

–

ms

Data Access Time

FtRS

–

25

–

ns

Number of Writing/Erasing

FNWE

–

10,000(4)

Times

NOTES:

1.

The Programming time is the time during which one byte (8-bit) is programmed.

2.

The Chip Erasing time is the time during which all 64K byte block is erased.

3.

The Sector Erasing time is the time during which all 128 byte block is erased.

4.

Maximum number of Writing/Erasing is 10,000 times for full-flash(S3F828B) and 100 times for half-flash

(S3F8289/F8285).

5.

The Chip Erasing is available in Tool Program Mode only.

Table 20-6. A/D Converter Electrical Characteristics

(TA = –25 °C to + 85 °C, VDD = 2.7 V to 3.6 V, VSS = 0 V)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Analog input voltage

VIAN

–

VSS

–

AVREF

V

Analog input

impedance

RAN

–

2

1000

–

M

Ω

Analog reference

voltage

AVREF

–

2.0

–

VDD

V

2. CHAPTHER 19. EMBEDDED FLASH MEMORY INTERFACE

This chapter is modified for only S3F828B.

3. CHAPTHER 12. 16-BIT TIMER 0/1

The Figure12-2 condition ‘Match signal’ should be moved in the page 12-3.

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