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2SD2249 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SD2249 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor 2SD2249 Silicon NPN epitaxial planer type For low-frequency power amplification s Features q Low collector to emitter saturation voltage VCE(sat). q Satisfactory operation performances at high efficiency with the low-voltage power supply. q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5 ±0.1 2.5 ±0.5 2.5±0.5 6.9 ±0.1 1.05 ±0.05 (1.45) 4.0 0.7 0.8 0.65 max. 0.45 +0.1 –0.05 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC * Tj Tstg Ratings 40 20 7 8 5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO VCEO VEBO hFE1 *1 hFE2 VCE(sat) fT Cob Conditions VCB = 10V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A *2 VCE = 2V, IC = 2A *2 IC = 3A, IB = 0.1A *2 VCB = 6V, IE = –50mA, f = 200MHz *2 VCB = 20V, IE = 0, f = 1MHz min 20 7 230 150 typ 0.3 150 max 0.1 0.1 600 1 50 Unit µA µA V V V MHz pF *1h FE1 Rank classification Rank Q R hFE1 230 ~ 380 340 ~ 600 1.2 ±0.1 0.65 max. 0.45 0.1 0.05 + – Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type) *2 Pulse measurement * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion |
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