2SD2321 datasheet(2/2 Pages) PANASONIC | Silicon NPN epitaxial planer type(For low-frequency power amplification)

2 page

Transistor

2SD2321

PC — Ta

IC — VCE

IC — VBE

VCE(sat) — IC

VBE(sat) — IC

hFE — IC

fT — IE

Cob — VCB

Area of safe operation (ASO)

160

120

140

100

500

400

300

200

100

Ambient temperature Ta (˚C)

2.4

2.0

1.6

0.4

1.2

0.8

2.4

2.0

1.6

1.2

0.8

0.4

Ta=25˚C

B=7mA

6mA

5mA

4mA

3mA

2mA

1mA

Collector to emitter voltage V

(V)

02.0

1.6

0.4

1.2

0.8

CE=2V

Ta=75˚C

–25˚C

25˚C

Base to emitter voltage V

(V)

0.01

0.1

0.03

0.3

0.001

0.003

0.01

0.03

0.1

0.3

Ta=75˚C

25˚C

–25˚C

C/IB=30

Collector current I

(A)

0.01

0.1

0.03

0.3

0.01

0.03

0.1

0.3

100

C/IB=30

Ta=–25˚C

25˚C

75˚C

Collector current I

(A)

0.01

0.1

0.03

0.3

600

500

400

300

200

100

Ta=75˚C

25˚C

–25˚C

CE=2V

Collector current I

(A)

– 0.01

– 0.1

–1

–10

– 0.03

– 0.3

–3

400

300

100

250

350

200

150

CB=6V

Ta=25˚C

Emitter current I

(A)

100

E=0

f=1MHz

Ta=25˚C

Collector to base voltage V

(V)

0.1

100

0.3

0.01

0.03

0.1

0.3

100

Single pulse

Ta=25˚C

t=10ms

t=1s

Collector to emitter voltage V

(V)

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