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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 02 — 8 April 2005

3 of 9

Philips Semiconductors

PMEG3015EH; PMEG3015EJ

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse

[3]

7.

Characteristics

[1]

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 6:

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

Table 7:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from junction

to ambient

in free air

PMEG3015EH

[1] [2] -

-

330

K/W

[2] [3] -

-

150

K/W

PMEG3015EJ

[1] [2] -

-

350

K/W

[2] [3] -

-

150

K/W

thermal resistance from junction

to solder point

PMEG3015EH

-

-

60

K/W

PMEG3015EJ

-

-

55

K/W

Table 8:

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

[1] -

125

160

mV

[1] -

185

220

mV

[1] -

255

290

mV

[1] -

330

380

mV

[1] -

400

480

mV

[1] -

440

550

mV

reverse current

-

60

150

µA

-

400

1000

µA

diode capacitance

-

60

72

pF