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K4F661612D-TI Datasheet(PDF) 1 Page - Samsung semiconductor |
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K4F661612D-TI Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 35 page CMOS DRAM K4F661612D, K4F641612D Industrial Temperature This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low pow er) are optional features of this family. All of this family have CAS -before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability. • Fast Page Mode operation • 2CAS Byte/Word Read/Write operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Self-refresh capability (L-ver only) • Fast parallel test mode capability • LVTTL(3.3V) compatible inputs and outputs • Early Write or output enable controlled write • JEDEC Standard pinout • Available in Plastic TSOP(II) packages • +3.3V ±0.3V power supply • Industrial Temperature operating ( -40~85 °C ) SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION Control Clocks Lower Data out Buffer RAS UCAS LCAS W Vcc Vss DQ0 to DQ7 A0~A12 (A0~A11)*1 A0~A8 (A0~A9)*1 Memory Array 4,194,304 x 16 Cells FUNCTIONAL BLOCK DIAGRAM Note) *1 : 4K Refresh Upper Data in Buffer Upper Data out Buffer Lower Data in Buffer DQ8 to DQ15 OE Row Decoder Column Decoder VBB Generator Refresh Timer Refresh Control Refresh Counter Row Address Buffer Col. Address Buffer • Part Identification - K4F661612D-TI/P(3.3V, 8K Ref.) - K4F641612D-TI/P(3.3V, 4K Ref.) FEATURES • Refresh Cycles Part NO. Refresh cycle Refresh time Normal L-ver K4F661612D* 8K 64ms 128ms K4F641612D 4K • Performance Range Speed tRAC tCAC tRC tPC -45 45ns 12ns 80ns 31ns -50 50ns 13ns 90ns 35ns -60 60ns 15ns 110ns 40ns • Active Power Dissipation Speed 8K 4K -45 324 468 -50 288 432 -60 252 396 Unit : mW * Access mode & RAS only refresh mode : 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.) CAS -before-RAS & Hidden refresh mode : 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.) |
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