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2SK3745LS Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part # 2SK3745LS
Description  High-Voltage, High-Speed Switching Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SK3745LS Datasheet(HTML) 1 Page - Sanyo Semicon Device

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2SK3745LS
No.8635-1/4
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
High reliability (Adoption of HVP process).
Micaless package facilitating mounting.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
1500
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID*
2A
Drain Current (Pulse)
IDP
4A
Allowable Power Dissipation
PD
2.0
W
Tc=25
°C35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Enargy (Single Pulse) *1
EAS
42
mJ
Avalanche Current *2
IAV
2A
*Shows chip capability
*1 VDD=99V, L=20mH, IAV=2A
*2 L
≤20mH, single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
1500
V
Zero-Gate Voltage Drain Current
IDSS
VDS=1200V, VGS=0V
100
µA
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0V
±10
µA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.5
3.5
V
Forward Transfer Admittance
yfs
VDS=20V, ID=1A
0.7
1.4
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1A, VGS=10V
10
13
Marking : K3745
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8635
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N1505QB MS IM TB-00001890
2SK3745LS
N-Channel Silicon MOSFET
High-Voltage, High-Speed Switching
Applications


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