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NAND02GW3B2BN1 Datasheet(PDF) 1 Page - STMicroelectronics |
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NAND02GW3B2BN1 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 64 page February 2006 Rev 4.0 1/64 2 NAND01G-B NAND02G-B 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Feature summary ● High Density NAND Flash memories – Up to 2 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications ● NAND interface – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ● Supply voltage –1.8V device: VDD = 1.7 to 1.95V –3.0V device: VDD = 2.7 to 3.6V ● Page size – x8 device: (2048 + 64 spare) Bytes – x16 device: (1024 + 32 spare) Words ● Block size – x8 device: (128K + 4K spare) Bytes – x16 device: (64K + 2K spare) Words ● Page Read/Program – Random access: 25µs (max) – Sequential access: 50ns (min) – Page program time: 300µs (typ) ● Copy Back Program mode – Fast page copy without external buffering ● Cache Program and Cache Read modes – Internal Cache Register to improve the program and read throughputs ● Fast Block Erase – Block erase time: 2ms (typ) ● Status Register ● Electronic Signature ● Chip Enable ‘don’t care’ – for simple interface with microcontroller ● Serial Number option ● Data protection – Hardware and Software Block Locking – Hardware Program/Erase locked during Power transitions ● Data integrity – 100,000 Program/Erase cycles – 10 years Data Retention ■ ECOPACK® packages ■ Development tools – Error Correction Code software and hardware models – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models FBGA TSOP48 12 x 20mm VFBGA63 9.5 x 12 x 1mm TFBGA63 9.5 x 12 x 1.2mm www.st.com |
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