2SD592 datasheet(1/3 Pages) PANASONIC

Part #	2SD592

Description	Silicon NPN epitaxial planer type(For low-frequency output amplification)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Transistor

2SD592, 2SD592A

Silicon NPN epitaxial planer type

For low-frequency output amplification

Complementary to 2SB621 and 2SB621A

s Features

q

Large collector power dissipation PC.

q

Low collector to emitter saturation voltage VCE(sat).

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to

base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

5.0

±0.2

4.0

±0.2

0.45

+0.2

–0.1

0.45

+0.2

–0.1

1.27

2.54

±0.15

2

13

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

30

60

25

50

5

1.5

1

750

150

–55 ~ +150

Unit

V

A

mW

˚C

2SD592

2SD592A

2SD592

2SD592A

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base

voltage

Collector to emitter

voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

VCBO

VCEO

VEBO

hFE1

*1

hFE2

VCE(sat)

VBE(sat)

fT

Cob

Conditions

VCB = 20V, IE = 0

IC = 10µA, IE = 0

IC = 2mA, IB = 0

IE = 10µA, IC = 0

VCE = 10V, IC = 500mA

*2

VCE = 5V, IC = 1A

*2

IC = 500mA, IB = 50mA

*2

IC = 500mA, IB = 50mA

*2

VCB = 10V, IE = –50mA, f = 200MHz

VCB = 10V, IE = 0, f = 1MHz

min

30

60

25

50

5

85

50

typ

160

0.2

0.85

200

max

0.1

340

0.4

1.2

20

Unit

µA

V

MHz

pF

*1h

FE1 Rank classification

Rank

Q

R

S

hFE1

85 ~ 170

120 ~ 240

170 ~ 340

*2 Pulse measurement

2SD592

2SD592A

2SD592

2SD592A

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