NAND01GW4B2BZA6 datasheet(1/64 Pages) STMICROELECTRONICS

Part #	NAND01GW4B2BZA6

Description	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 64 page

February 2006

Rev 4.0

1/64

2

NAND01G-B

NAND02G-B

1 Gbit, 2 Gbit,

2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

Feature summary

●

High Density NAND Flash memories

–

Up to 2 Gbit memory array

–

Up to 64Mbit spare area

–

Cost effective solutions for mass

storage applications

●

NAND interface

–

x8 or x16 bus width

–

Multiplexed Address/ Data

–

Pinout compatibility for all densities

●

Supply voltage

–1.8V device: VDD = 1.7 to 1.95V

–3.0V device: VDD = 2.7 to 3.6V

●

Page size

–

x8 device: (2048 + 64 spare) Bytes

–

x16 device: (1024 + 32 spare) Words

●

Block size

–

x8 device: (128K + 4K spare) Bytes

–

x16 device: (64K + 2K spare) Words

●

Page Read/Program

–

Random access: 25µs (max)

–

Sequential access: 50ns (min)

–

Page program time: 300µs (typ)

●

Copy Back Program mode

–

Fast page copy without external

buffering

●

Cache Program and Cache Read modes

–

Internal Cache Register to improve the

program and read throughputs

●

Fast Block Erase

–

Block erase time: 2ms (typ)

●

Status Register

●

Electronic Signature

●

Chip Enable ‘don’t care’

–

for simple interface with microcontroller

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Serial Number option

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Data protection

–

Hardware and Software Block Locking

–

Hardware Program/Erase locked during

Power transitions

●

Data integrity

–

100,000 Program/Erase cycles

–

10 years Data Retention

■

ECOPACK® packages

■

Development tools

–

Error Correction Code software and

hardware models

–

Bad Blocks Management and Wear

Leveling algorithms

–

File System OS Native reference

software

–

Hardware simulation models

FBGA

TSOP48 12 x 20mm

VFBGA63 9.5 x 12 x 1mm

TFBGA63 9.5 x 12 x 1.2mm

www.st.com

Similar Part No. - NAND01GW4B2BZA6

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	NAND01GW4B2BZA6E	711Kb / 62P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Numonyx B.V	NAND01GW4B2BZA6E	1Mb / 60P	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
Numonyx B.V	NAND01GW4B2BZA6E	1Mb / 67P	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory January 2010 Rev 5
STMicroelectronics	NAND01GW4B2BZA6F	711Kb / 62P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Numonyx B.V	NAND01GW4B2BZA6F	1Mb / 60P	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

More results

Similar Description - NAND01GW4B2BZA6

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	NAND01G-B2B	711Kb / 62P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
STMicroelectronics	NAND512-B	383Kb / 59P	512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory February 2005
Numonyx B.V	NAND04GW3B2B	1Mb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
STMicroelectronics	NAND04GW3B2B	501Kb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
Numonyx B.V	NAND01G-B2B	1Mb / 60P	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
	NAND01GR3B2C	1Mb / 67P	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory January 2010 Rev 5
	NAND04G-B2D	1Mb / 69P	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
	NAND02G-B2D	1Mb / 69P	2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
	NAND08GW3C2A	1Mb / 58P	8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
	NAND08GW3C2B	1Mb / 60P	8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory

More results

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