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TSH343ID Datasheet(PDF) 3 Page - STMicroelectronics |
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TSH343ID Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 14 page  TSH343 Electrical Characteristics Rev. 2 3/14 2 Electrical Characteristics Table 3. VCC = +5V Single Supply, Tamb = 25°C (unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit DC Performance VDC Input DC shift RL = 150Ω, Tamb 0.4 0.6 0.8 mV -40°C < Tamb < +85°C 0.53 Iib Input Bias Current Tamb , input to GND 18.2 35 µA -40°C < Tamb < +85°C 20.7 Rin Input Resistance Tamb 4G Ω Cin Input Capacitance Tamb 1pF ICC Supply Current per Buffer no Load, input to GND 14.4 18 mA -40°C < Tamb < +85°C 14.9 PSRR Power Supply Rejection Ratio 20 log ( ∆Vout/∆VCC) (see Figure 25 and Figure 26) input to GND, F = 1MHz CLF=470nF CHF=100uF 70 dB G DC Voltage Gain RL = 150Ω, Vin = 1V 1.92 1.99 2.05 V/V DG Variation of the DC Voltage Gain between inputs of 0.3V and 1V Input step from 0.3V to 1V 0.26 0.8 % MG1 Gain Matching between 3 channels Input = 1V 0.5 2 % MG0.3 Gain Matching between 3 channels Input = 0.3V 0.5 2 % Dynamic Performance and Output Characteristics Bw -3dB Bandwidth Small Signal Vout = 20mVp RL = 150Ω 160 280 MHz Gain Flatness @ 0.1dB Small Signal Vout = 20mVp RL = 150Ω 65 FPBW Full Power Bandwidth Vout =2Vp-p, VICM =0.5V, RL = 150Ω 130 200 MHz D Delay between each channel (see Figure 30) 0 to 30MHz 0.5 ns SR Slew Rate (1) Input step from 0V to 1V, RL = 150Ω 500 780 V/ µs VOH High Level Output Voltage Vin DC = +1.5V, RL =150Ω 3.7 3.9 V VOL Low Level Output Voltage RL = 150Ω 40 mV IOUT Output Current Vout =2V, Tamb 45 90 mA -40°C < Tamb <+85°C 82 Output Short Circuit Current (Isource) 100 mA |
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