8

RF Device Data

Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

TYPICAL CHARACTERISTICS

100

22

1

0

70

Figure 11. Power Gain and Drain Efficiency

versus CW Output Power

f = 880 MHz

−30

_C

85

_C

10

21

20

18

16

60

50

40

30

20

Figure 12. Power Gain versus Output Power

16 V

250

16

21

0

17

19

18

20

f = 880 MHz

19

17

15

10

25

_C

50

100

200

20 V

24 V

28 V

32 V

200

85

_C

25

_C

150

210

drain current. Life tests at elevated temperatures have correlated to

better than

±10% of the theoretical prediction for metal failure. Divide

90

110

130

150

170

190

Figure 13. MTTF Factor versus Junction Temperature

100

120

140

160

180

200