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MRF6S9125 Datasheet(PDF) 8 Page - Freescale Semiconductor, Inc |
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MRF6S9125 Datasheet(HTML) 8 Page - Freescale Semiconductor, Inc |
8 / 16 page 8 RF Device Data Freescale Semiconductor MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 TYPICAL CHARACTERISTICS 100 22 1 0 70 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power VDD = 28 Vdc IDQ = 950 mA f = 880 MHz TC = −30_C −30 _C 85 _C 10 21 20 18 16 60 50 40 30 20 Gps ηD Figure 12. Power Gain versus Output Power Pout, OUTPUT POWER (WATTS) CW VDD = 12 V 16 V 250 16 21 0 17 19 18 20 IDQ = 950 mA f = 880 MHz 19 17 15 10 25 _C 50 100 200 20 V 24 V 28 V 32 V 200 85 _C 25 _C 150 210 109 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. 108 107 90 110 130 150 170 190 Figure 13. MTTF Factor versus Junction Temperature 100 120 140 160 180 200 |
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