2SD973 datasheet(2/3 Pages) PANASONIC | Silicon NPN epitaxial planer type(For low-frequency power amplification)

2 page

Transistor

2SD973, 2SD973A

PC — Ta

IC — VCE

IC — IB

VCE(sat) — IC

VBE(sat) — IC

hFE — IC

fT — IE

Cob — VCB

VCER — RBE

160

120

140

100

1.4

1.2

0.4

1.0

0.8

0.2

0.6

Printed circut board: Copper

foil area of 1cm2 or more, and

the board thickness of 1.7mm

for the collector portion.

Ambient temperature Ta (˚C)

010

1.50

1.25

1.00

0.75

0.50

0.25

Ta=25˚C

B=10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

Collector to emitter voltage V

(V)

012

1.2

1.0

0.8

0.6

0.4

0.2

CE=10V

Ta=25˚C

Base current I

(mA)

0.01

0.1

0.03

0.3

0.001

0.003

0.01

0.03

0.1

0.3

C/IB=10

Ta=75˚C

25˚C

–25˚C

Collector current I

(A)

0.01

0.1

0.03

0.3

0.01

0.03

0.1

0.3

100

C/IB=10

Ta=–25˚C

25˚C

75˚C

Collector current I

(A)

0.01

0.1

0.03

0.3

600

500

400

300

200

100

Ta=75˚C

25˚C

–25˚C

CE=10

Collector current I

(A)

–1

–3

–10

–30

–100

200

160

120

CB=10V

Ta=25˚C

Emitter current I

(mA)

100

E=0

f=1MHz

Ta=25˚C

Collector to base voltage V

(V)

0.1

100

0.3

120

100

C=10mA

Ta=25˚C

2SD973A

2SD973

Base to emitter resistance R

Ω)

Part Number	Components Description	Html View	Manufacturer
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2SD1244	Silicon NPN epitaxial planer type For low-frequency power amplification	1 2	Panasonic Semiconductor
2SD2321	Silicon NPN epitaxial planer type For low-frequency power amplification	1 2	Panasonic Semiconductor
2SD965	Silicon NPN epitaxial planer type For low-frequency power amplification	1 2	Panasonic Semiconductor
2SC1317	Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification	1 2 3	Panasonic Semiconductor
2SD966	Silicon NPN epitaxial planer type For low-frequency power amplification	1 2	Panasonic Semiconductor
XN01558	Silicon NPN epitaxial planar type For low-frequency amplification	1 2 3	Panasonic Semiconductor

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