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NM93CS46LEMT8 Datasheet(PDF) 1 Page - National Semiconductor (TI) |
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NM93CS46LEMT8 Datasheet(HTML) 1 Page - National Semiconductor (TI) |
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1 / 14 page  TLD10044 August 1996 NM93CS06LCS46LCS56LCS66L 256-1024-2048-4096-Bit Serial EEPROM with Extended Voltage (27V to 55V) and Data Protect (MICROWIRE TM Bus Interface) General Description The NM93CS06LCS46LCS56LCS66L devices are 256102420484096 bits respectively of non-volatile electrically erasable memory divided into 1664128256 x 16-bit registers (addresses) The NM93CSxxL Family func- tions in an extended voltage operating range and is fabri- cated using National Semiconductor’s floating gate CMOS technology for high reliability high endurance and low pow- er consumption N registers (N s 16 N s 64 N s 128 N s 256) can be protected against data modification by pro- gramming the Protect Register with the address of the first register to be protected against data modification (All regis- ters greater than or equal to the selected address are then protected from further change) Additionally this address can be ‘‘locked’’ into the device making all future attempts to change data impossible These devices are available in both SO and TSSOP pack- ages for small space considerations The serial interface that controls these EEPROMs is MICROWIRE compatible providing simple interfacing to standard microcontrollers and microprocessors There are a total of 10 instructions 5 which operate on the EEPROM memory and 5 which operate on the Protect Register The memory instructions are READ WRITE WRITE ALL WRITE ENABLE and WRITE DISABLE The Protect regis- ter instructions are PRREAD PRWRITE PRCLEAR PRDISABLE and PRENABLE Features Y Sequential register read Y Write protection in a user defined section of memory Y 27V to 55V operating range in all modes Y Typical active current of 200 mA typical standby current of 1 mA Y No erase required before write Y Reliable CMOS floating gate technology Y MICROWIRE compatible serial IO Y Self timed write cycle Y Device status during programming mode Y 40 year data retention Y Endurance 106 data changes Y Packages Available 8-pin SO 8-pin DIP and 8-pin TSSOP Block Diagram TLD10044 – 1 TRI-STATE is a registered trademark of National Semiconductor Corporation MICROWIRETM is a trademark of National Semiconductor Corporation C1996 National Semiconductor Corporation RRD-B30M126Printed in U S A http www nationalcom |
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