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2SK2573 Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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2SK2573 Datasheet(HTML) 2 Page - Panasonic Semiconductor |
2 / 3 page 2 Power F-MOS FETs 2SK2573 Area of safe operation (ASO) PD Ta IAS L-load ID VGS RDS(on) ID Ciss, Coss, Crss VDS | Yfs | ID ton, tf, td(off) ID 050 40 10 30 20 0 16 12 4 10 14 8 2 6 V DS=25V T C=25˚C Drain current I D (A) 10–1 110 102 103 10–1 102 10 1 Non repetitive pulse T C=25˚C t=1ms 10ms 100ms DC I D I DP Drain to source voltage V DS (V) 0 200 50 150 100 10 10000 1000 100 30 300 3000 C iss C oss C rss f=1MHz T C=25˚C Drain to source voltage V DS (V) 10–2 10–1 110 10–1 102 10 1 E=20mJ T C=25˚C L-load (mH) 010 8 26 4 0 30 25 20 15 10 5 V DS=25V T C=25˚C Gate to source voltage V GS (V) 0 160 40 120 80 140 20 100 60 0 160 120 40 100 140 80 20 60 P D=3.0W (1) T C=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (1) (2) (3) Ambient temperature Ta (˚C) 050 40 10 30 20 0 1.2 1.0 0.8 0.6 0.4 0.2 T C=25˚C V GS=10V 15V Drain current I D (A) 025 20 515 10 0 800 600 200 500 700 400 100 300 V CC=150 V GS=10V T C=25˚C t d(off) t on t f Drain current I D (A) |
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