IPDH4N03LAG datasheet(1/9 Pages) INFINEON

Part #	IPDH4N03LAG

Description	OPTIMOS 2 POWER - TRANSISTOR

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPDH4N03LA G

IPSH4N03LA G

OptiMOS®2 Power-Transistor

Features

• Ideal for high-frequency dc/dc converters

• Qualified according to JEDEC

1) for target applications

• N-channel, logic level

• Excellent gate charge x R DS(on) product (FOM)

• Superior thermal resistance

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

2)

90

A

T C=100 °C

77

Pulsed drain current

I D,pulse

T C=25 °C

3)

360

Avalanche energy, single pulse

E AS

I D=90 A, R GS=25 Ω

150

mJ

Reverse diode dv /dt

dv /dt

I D=90 A, V DS=20 V,

di /dt =200 A/µs,

T j,max=175 °C

6

kV/µs

Gate source voltage

4)

V GS

±20

V

Power dissipation

P tot

T C=25 °C

94

W

Operating and storage temperature

T j, T stg

-55 ... 175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

Value

V DS

25

V

R DS(on),max (SMD Version)

4.2

m

Ω

I D

90

A

Product Summary

Type

IPDH4N03LA G

IPSH4N03LA G

Package

P-TO252-3-11

P-TO251-3-11

Ordering Code

Q67042-S4250

Q67042-S4254

Marking

H4N03LA

Rev. 0.92 - target data sheet

page 1

2004-10-27

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