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HSB226S Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HSB226S Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 5 page  HSB226S Rev.0, Jul. 2000, page 2 of 5 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Repetitive peak reverse voltage V RRM 25 V Non-Repetitive peak forward surge current I FSM * 1 *2 200 mA forward current I F * 2 50 mA Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Notes: 1. 10msec sine wave 1 pulse 2. Two device total Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition Forward voltage V F1 — — 0.33 V I F = 1 mA V F2 — — 0.38 V I F = 5 mA Reverse current I R — — 0.45 µAV R = 20 V Capacitance C — — 2.80 pF V R = 1 V, f = 1 MHz Note: Per one device |
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