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NSS30100LT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NSS30100LT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. 0 1 Publication Order Number: NSS30100L/D NSS30100LT1G 30 V, 2 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −30 Vdc Collector-Base Voltage VCBO −50 Vdc Emitter-Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −1.0 A Collector Current − Peak ICM −2.0 A THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25 °C PD (Note 1) 310 2.5 mW mW/ °C Thermal Resistance, Junction to Ambient RθJA (Note 1) 403 °C/W Total Device Dissipation TA = 25°C Derate above 25 °C PD (Note 2) 710 5.7 mW mW/ °C Thermal Resistance, Junction to Ambient RθJA (Note 2) 176 °C/W Total Device Dissipation (Single Pulse < 10 sec.) PDsingle (Note 3) 575 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR− 4 @ Minimum Pad. 2. FR− 4 @ 1.0 X 1.0 inch Pad. 3. Refer to Figure 8. Device Package Shipping† ORDERING INFORMATION NSS30100LT1G SOT−23 (Pb−Free) 3000/Tape & Reel DEVICE MARKING COLLECTOR 3 1 BASE 2 EMITTER VS4 SOT−23 (TO−236) CASE 318 STYLE 6 3 2 1 VS4 = Specific Device Code 3 1 2 http://onsemi.com 30 VOLTS 2.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 200 mW †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. |
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