NSS30100LT1G datasheet(1/6 Pages) ONSEMI

Part #	NSS30100LT1G

Description	30 V, 2 A, Low Vce(sat) PNP Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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June, 2005 − Rev. 0

1

Publication Order Number:

NSS30100L/D

NSS30100LT1G

30 V, 2 A, Low VCE(sat)

PNP Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat)

transistors are miniature surface mount devices featuring ultra low

saturation voltage (VCE(sat)) and high current gain capability. These

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

Typical application are DC−DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e2PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

• This is a Pb−Free Device

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

VCEO

−30

Vdc

Collector-Base Voltage

VCBO

−50

Vdc

Emitter-Base Voltage

VEBO

−5.0

Vdc

Collector Current − Continuous

IC

−1.0

A

Collector Current − Peak

ICM

−2.0

A

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

TA = 25°C

Derate above 25

°C

PD (Note 1)

310

2.5

mW

mW/

°C

Thermal Resistance,

Junction to Ambient

RθJA (Note 1)

403

°C/W

Total Device Dissipation

TA = 25°C

Derate above 25

°C

PD (Note 2)

710

5.7

mW

mW/

°C

Thermal Resistance,

Junction to Ambient

RθJA (Note 2)

176

°C/W

Total Device Dissipation

(Single Pulse < 10 sec.)

PDsingle

(Note 3)

575

mW

Junction and Storage

Temperature Range

TJ, Tstg

−55 to

+150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR− 4 @ Minimum Pad.

2. FR− 4 @ 1.0 X 1.0 inch Pad.

3. Refer to Figure 8.

Device

Package

Shipping†

ORDERING INFORMATION

NSS30100LT1G

SOT−23

(Pb−Free)

3000/Tape & Reel

DEVICE MARKING

COLLECTOR

3

1

BASE

2

EMITTER

VS4

SOT−23 (TO−236)

CASE 318

STYLE 6

3

2

1

VS4 = Specific Device Code

3

1

2

http://onsemi.com

30 VOLTS

2.0 AMPS

PNP LOW VCE(sat) TRANSISTOR

EQUIVALENT RDS(on) 200 mW

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

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