2Mx36 & 4Mx18 DDRII CIO b2 SRAM

K7I643682M

K7I641882M

- 11 -

Rev 1.0

Aug. 2005

Undershoot Timing

Overershoot Timing

50

Ω

SRAM

Zo=50

Ω

0.75V

ZQ

250

Ω

AC TEST OUTPUT LOAD

AC TEST CONDITIONS

Note: Parameters are tested with RQ=250

Ω

Parameter

Sym-

Value

Unit

Core Power Supply Voltage

1.7~1.9

V

Output Power Supply Voltage

1.4~1.9

V

Input High/Low Level

1.25/0.25

V

Input Reference Level

0.75

V

Input Rise/Fall Time

0.3/0.3

ns

Output Timing Reference Level

V

THERMAL RESISTANCE

Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site

PRMETER

SYMBOL

Typ

Unit

NOTES

Junction to Ambient

21

Junction to Case

2.48

PIN CAPACITANCE

Note: 1. Parameters are tested with RQ=250

2. Periodically sampled and not 100% tested.

PRMETER

SYMBOL

TESTCONDITION

TYP

MAX

Unit

NOTES

Address Control Input Capacitance

3.5

4

pF

Input and Output Capacitance

4

5

pF

Clock Capacitance

-3

4

pF