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AN2147FHP Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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AN2147FHP Datasheet(HTML) 2 Page - Panasonic Semiconductor |
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2 / 6 page  42 60 78 mA min typ max Unit 1.68 1.8 1.92 V Itot Total circuit current Parameter Condition Symbol VREF Reference voltage (or VREF output voltage) 2.1 2.5 2.9 V VCPOB Pulse separation level CPOB 0.6 1.0 1.4 V VPBLK Pulse separation level PBLK 2.1 2.5 2.9 V VCP2 Pulse separation level CP2 0.6 1.0 1.4 V VCBLK Pulse separation level CBLK 0.6 1.0 1.4 V VFH/2 Pulse separation level FH/2 0.4 0.8 1.2 V VSP Pulse separation level SP 0.6 1.0 1.4 V VWBLK Pulse separation level WBLK 1.1 1.5 1.9 V VDSYN Pulse separation level SYNC 22.5 26 28.5 dB VYMAX Luminance AGC max. gain V65=10STEP 50mVP–P –9 –6 –4 dB VYMIN Luminance AGC mini. gain V65=10STEP 1500mVP–P 22.5 26 28.5 dB VCMAX Color difference AGC min. gain Note A) V65=Sin500kHz 50mVP–P –9 –6 –4 dB VCMIN Color difference AGC max. gain Note A) V65=Sin500kHz 1500mVP–P 350 470 600 mVP–P VYGAM1 Luminance g characteristics (1) V69=10STEP 1000mVP–P 3rd step 470 630 810 mVP–P VYGAM2 Luminance g characteristics (2) V69=10STEP 1000mVP–P 5 step 720 970 1260 mVP–P VYGAM3 Luminance g characteristics (3) V69=10STEP 1000mVP–P 10 step –26 dB VYFADE V16=10STEP 300mVP–P 18.5 22 24.5 dB VHAP V16=Sin3.5kHz 100mVP–P 60 mVP–P VBCLIP V11=Sin500kHz 40mVP–P Luminance fade characteristics Horizontal AP generation circuit characteristics Note A) Base clip characteristics Note B) s Electrical Characteristics (VCC=4.6V, Ta=25±2˚C) 580 680 800 mVP–P VYOUT Output luminance signal amplitude V29=10STEP 600mVP–P 800 890 1100 mV VHCLIP Output high-clip characteristics V29=10STEP 1000mVP–P –50 –28 –12 mV VLCLIP Output low-clip characteristics V29=10STEP 200mVP–P (reverse) 268 295 322 mVP–P VSYNC Synchronous signal level V29=C–GND –20 dB VCCLIP Chroma clip characteristics Note B) V20=Sin3.5MHz 600mVP–P (V29=white signal) 300 450 600 mVP–P VSH S/H characteristics V65=square wave 500kHz 1VP–P 40 60 100 mV VPED1 Pedestal control characteristics (1) V29=C–GND –30 –10 0 mV VPED2 Pedestal control characteristics (2) V29=C–GND –12 0 12 mV VSW Switch level V48, V50, V54, V56=C–GND –30 0 30 mV VSWOFF Switch DC offset V48, V50, V54, V56=C–GND 420 580 760 mVP–P VRWB RWB control characteristics V56=10STEP 200mVP–P 420 580 760 mVP–P VCYG CY+G control characteristics V54=10STEP 200mVP–P 420 580 760 mVP–P VBWB BWB control characteristics V50=10STEP 200mVP–P 420 580 760 mVP–P VYEG YE+G control characteristics V48=10STEP 200mVP–P 380 520 710 mVP–P VRMAT R-Y matrix control characteristics V50=10STEP 200mVP–P 380 520 710 mVP–P VBMAT B-Y matrix control characteristics V56=10STEP 200mVP–P 100 mVP–P VGAML γ control signal leak V24=10STEP 500mVP–P 300 410 530 mVP–P VCGAM1 Color difference γ characteristics (1) Color difference γ characteristics (2) V22=10STEP 500mVP–P V24=10STEP 1VP–P 3rd step 380 530 690 mVP–P VCGAM2 V22=10STEP 500mVP–P V24=10STEP 1VP–P 5 step Note A) Sine wave with BLK and pedestal Note B) Sine wave with BLK The value in the above characteristics is not a guaranteed value, but reference one on design. |
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